TW030N120C,S1F

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-247-3

Supplier Device Package :

TO-247

Subcategory :

MOSFETs

Vgs (Max) :

+25V, -10V

RoHS :

Details

Mounting Style :

Through Hole

Drive Voltage (Max Rds On, Min Rds On) :

18V

Input Capacitance (Ciss) (Max) @ Vds :

2925 pF @ 800 V

Number of Channels :

1 Channel

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

40mOhm @ 30A, 18V

Vgs(th) (Max) @ Id :

5V @ 13mA

Transistor Polarity :

N-Channel

FET Type :

N-Channel

Maximum Operating Temperature :

+ 175 C

Drain to Source Voltage (Vdss) :

1200 V

Package :

Tube

Gate Charge (Qg) (Max) @ Vgs :

82 nC @ 18 V

Brand :

Toshiba

FET Feature :

-

Minimum Operating Temperature :

- 55 C

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

60A (Tc)

Product Category :

MOSFET

Manufacturer :

Toshiba

Channel Mode :

Enhancement

Operating Temperature :

175°C

Series :

-

Product Status :

Active

Power Dissipation (Max) :

249W (Tc)

Rise Time :

53 ns

Product Type :

MOSFET