TT8U1TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

JESD-609 Code :

e2

Factory Lead Time :

10 Weeks

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.105Ohm

Gate to Source Voltage (Vgs) :

10V

FET Feature :

Schottky Diode (Isolated)

Continuous Drain Current (ID) :

2.4A

Vgs (Max) :

±10V

Mounting Type :

Surface Mount

Fall Time (Typ) :

45 ns

Pin Count :

8

Rds On (Max) @ Id, Vgs :

105m Ω @ 2.4A, 4.5V

Terminal Position :

Dual

Number of Terminations :

8

Current - Continuous Drain (Id) @ 25°C :

2.4A Ta

Number of Pins :

8

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Gate Charge (Qg) (Max) @ Vgs :

6.7nC @ 4.5V

Time@Peak Reflow Temperature-Max (s) :

10

Rise Time :

25ns

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

1V @ 1mA

Turn-Off Delay Time :

55 ns

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

9 ns

Number of Elements :

1

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

20V

Published :

2009

Package / Case :

8-SMD, Flat Lead

Drain to Source Voltage (Vdss) :

20V

Peak Reflow Temperature (Cel) :

260

FET Type :

P-Channel

Lead Free :

Lead Free

Operating Temperature :

150°C TJ

Power Dissipation-Max :

1.25W Ta

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

850pF @ 10V

Terminal Finish :

TIN COPPER