TSM7ND65CI
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- Mfr.Part #
- TSM7ND65CI
- Manufacturer
- Taiwan Semiconductor
- Package / Case
- TO-220-3 Full Pack, Isolated Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 7A ITO220
- Stock
- 3
- In Stock ：
- 3
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- Manufacturer :
- Taiwan Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 1.35 Ω @ 1.8A, 10V
- Vgs (Max) :
- ±30V
- Vgs(th) (Max) @ Id :
- 3.8V @ 250μA
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- TO-220-3 Full Pack, Isolated Tab
- Drain to Source Voltage (Vdss) :
- 650V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1124pF @ 50V
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 50W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 7A Tc
- Factory Lead Time :
- 28 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 25nC @ 10V
- Datasheets
- TSM7ND65CI
N-Channel Tube 1.35 Ω @ 1.8A, 10V ±30V 1124pF @ 50V 25nC @ 10V 650V TO-220-3 Full Pack, Isolated Tab
TSM7ND65CI Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1124pF @ 50V maximal input capacitance.To operate this transistor, you will need a 650V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
TSM7ND65CI Features
a 650V drain to source voltage (Vdss)
TSM7ND65CI Applications
There are a lot of Taiwan Semiconductor Corporation
TSM7ND65CI applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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