TSM7NC65CF C0G

Manufacturer :

Taiwan Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

1169pF @ 50V

Package / Case :

TO-220-3 Full Pack

Drain Current-Max (Abs) (ID) :

7A

Number of Elements :

1

Vgs (Max) :

±30V

Drain to Source Voltage (Vdss) :

650V

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Pulsed Drain Current-Max (IDM) :

21A

Rds On (Max) @ Id, Vgs :

1.35 Ω @ 2A, 10V

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

160 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

650V

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-220AB

Factory Lead Time :

20 Weeks

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

No

Current - Continuous Drain (Id) @ 25°C :

7A Tc

FET Type :

N-Channel

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Power Dissipation-Max :

44.6W Tc

Mounting Type :

Through Hole

JESD-30 Code :

R-PSFM-T3

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

Isolated

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ