TSM5NC50CF C0G

Manufacturer :

Taiwan Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

586pF @ 50V

Pulsed Drain Current-Max (IDM) :

15A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

500V

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-220-3 Full Pack

Number of Terminations :

3

Power Dissipation-Max :

40W Tc

Avalanche Energy Rating (Eas) :

122.5 mJ

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSFM-T3

Packaging :

Tube

JEDEC-95 Code :

TO-220AB

Transistor Element Material :

SILICON

Vgs (Max) :

±30V

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

DS Breakdown Voltage-Min :

500V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

1.38 Ω @ 1.7A, 10V

Surface Mount :

No

Case Connection :

Isolated

Factory Lead Time :

20 Weeks

Drain Current-Max (Abs) (ID) :

5A

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

5A Tc

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4.5V @ 250μA

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Operating Temperature :

-55°C~150°C TJ