TSM3N100CP ROG

Manufacturer :

Taiwan Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

6 Ω @ 1.25A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Factory Lead Time :

19 Weeks

Packaging :

Digi-Reel®

Drain-source On Resistance-Max :

6Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

2

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

10A

Vgs (Max) :

±30V

DS Breakdown Voltage-Min :

1000V

Published :

2016

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

664pF @ 25V

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

Transistor Element Material :

SILICON

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

20 mJ

Current - Continuous Drain (Id) @ 25°C :

2.5A Tc

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Power Dissipation-Max :

99W Tc

Drain to Source Voltage (Vdss) :

1000V

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

2.5A

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Terminal Position :

Single

Transistor Application :

SWITCHING