TSM2N100CP ROG

Manufacturer :

Taiwan Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

1.85A Tc

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

77W Tc

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

DS Breakdown Voltage-Min :

1000V

Avalanche Energy Rating (Eas) :

20 mJ

Case Connection :

DRAIN

Number of Elements :

1

Surface Mount :

yes

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Pulsed Drain Current-Max (IDM) :

7.4A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

30 Weeks

Rds On (Max) @ Id, Vgs :

8.5 Ω @ 900mA, 10V

Vgs (Max) :

±30V

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSSO-G2

RoHS Status :

ROHS3 Compliant

Packaging :

Digi-Reel®

Drain Current-Max (Abs) (ID) :

1.85A

Input Capacitance (Ciss) (Max) @ Vds :

625pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

2

Drain to Source Voltage (Vdss) :

1000V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Transistor Element Material :

SILICON