TSM2N100CH C5G

Manufacturer :

Taiwan Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Drain to Source Voltage (Vdss) :

1000V

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSIP-T3

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

1.85A Tc

DS Breakdown Voltage-Min :

1000V

Input Capacitance (Ciss) (Max) @ Vds :

625pF @ 25V

Packaging :

Tube

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

7.4A

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Factory Lead Time :

30 Weeks

Rds On (Max) @ Id, Vgs :

8.5 Ω @ 900mA, 10V

Surface Mount :

No

Number of Elements :

1

Power Dissipation-Max :

77W Tc

Drain Current-Max (Abs) (ID) :

1.85A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

3

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

20 mJ

Case Connection :

DRAIN

Vgs (Max) :

±30V