TSM2312CX RFG

Manufacturer :

Taiwan Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

20 Weeks

HTS Code :

8541.21.00.95

JESD-609 Code :

e3

Number of Terminations :

3

DS Breakdown Voltage-Min :

20V

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

1V @ 250μA

Power Dissipation-Max :

750mW Ta

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-236-3, SC-59, SOT-23-3

Surface Mount :

yes

Current - Continuous Drain (Id) @ 25°C :

4.9A Tc

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

20V

Published :

2015

Additional Feature :

ULTRA LOW RESISTANCE

Time@Peak Reflow Temperature-Max (s) :

30

Vgs (Max) :

±8V

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

11.2nC @ 4.5V

FET Type :

N-Channel

JESD-30 Code :

R-PDSO-G3

Terminal Finish :

Tin (Sn)

Rds On (Max) @ Id, Vgs :

33m Ω @ 4.9A, 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

500pF @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

4.9A

Mounting Type :

Surface Mount

Number of Elements :

1

Terminal Position :

Dual

Drain-source On Resistance-Max :

0.033Ohm

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Packaging :

Digi-Reel®

Operating Mode :

ENHANCEMENT MODE