TSM2307CX RFG

Manufacturer :

Taiwan Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2015

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3V @ 250µA

Factory Lead Time :

28 Weeks

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

20A

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Drain Current-Max (Abs) (ID) :

3A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Digi-Reel®

Power Dissipation-Max :

1.25W Ta

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

DS Breakdown Voltage-Min :

30V

JESD-30 Code :

R-PDSO-G3

Current - Continuous Drain (Id) @ 25°C :

3A Tc

FET Type :

P-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Surface Mount :

yes

Additional Feature :

ULTRA LOW RESISTANCE

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

95m Ω @ 3A, 10V

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-236-3, SC-59, SOT-23-3

Operating Temperature :

150°C TJ

Drain-source On Resistance-Max :

0.095Ohm

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

30V

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

565pF @ 30V