TSM1N45CT B0G
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- Mfr.Part #
- TSM1N45CT B0G
- Manufacturer
- Taiwan Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- MOSFET N-CH 450V 500MA TO92
- Stock
- 2,530
- In Stock ：
- 2,530
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- Manufacturer :
- Taiwan Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Bulk
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±30V
- Rds On (Max) @ Id, Vgs :
- 4.25Ohm @ 250mA, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 235pF @ 25V
- Power Dissipation-Max :
- 2W Tc
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 4.25V @ 250μA
- Current - Continuous Drain (Id) @ 25°C :
- 500mA Tc
- Supplier Device Package :
- TO-92
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Drain to Source Voltage (Vdss) :
- 450V
- Gate Charge (Qg) (Max) @ Vgs :
- 6.5nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Through Hole
- Datasheets
- TSM1N45CT B0G
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N-Channel Bulk 4.25Ohm @ 250mA, 10V ±30V 235pF @ 25V 6.5nC @ 10V 450V TO-226-3, TO-92-3 (TO-226AA)
TSM1N45CT B0G Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 235pF @ 25V.Operating this transistor requires a 450V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
TSM1N45CT B0G Features
a 450V drain to source voltage (Vdss)
TSM1N45CT B0G Applications
There are a lot of Taiwan Semiconductor Corporation
TSM1N45CT B0G applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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