TSM120N06LCS RLG

Manufacturer :

Taiwan Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

92A

Mounting Type :

Surface Mount

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

23A Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Factory Lead Time :

20 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

54 mJ

Drain to Source Voltage (Vdss) :

60V

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

10A

FET Type :

N-Channel

Number of Terminations :

8

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.015Ohm

Gate Charge (Qg) (Max) @ Vgs :

37nC @ 10V

JESD-30 Code :

R-PDSO-G8

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Packaging :

Digi-Reel®

Input Capacitance (Ciss) (Max) @ Vds :

2193pF @ 30V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Vgs (Max) :

±20V

DS Breakdown Voltage-Min :

60V

Surface Mount :

yes

Power Dissipation-Max :

12.5W Tc

Rds On (Max) @ Id, Vgs :

12m Ω @ 10A, 10V

Number of Elements :

1