TSM10NC65CF C0G

Manufacturer :

Taiwan Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Mounting Type :

Through Hole

Pulsed Drain Current-Max (IDM) :

30A

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Input Capacitance (Ciss) (Max) @ Vds :

1650pF @ 50V

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

No

Factory Lead Time :

20 Weeks

FET Type :

N-Channel

DS Breakdown Voltage-Min :

650V

Drain to Source Voltage (Vdss) :

650V

Avalanche Energy Rating (Eas) :

372 mJ

Power Dissipation-Max :

45W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

TO-220AB

JESD-30 Code :

R-PSFM-T3

Drain Current-Max (Abs) (ID) :

10A

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Vgs (Max) :

±30V

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Case Connection :

Isolated

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

900m Ω @ 2A, 10V

Drain-source On Resistance-Max :

0.9Ohm

Package / Case :

TO-220-3 Full Pack