TSM10NC60CF C0G

Manufacturer :

Taiwan Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSFM-T3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

30A

Surface Mount :

No

Factory Lead Time :

20 Weeks

Packaging :

Tube

FET Type :

N-Channel

Case Connection :

Isolated

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.75Ohm

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

600V

JEDEC-95 Code :

TO-220AB

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

1652pF @ 50V

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-220-3 Full Pack

Power Dissipation-Max :

45W Tc

Avalanche Energy Rating (Eas) :

422.5 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

10A

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

Rds On (Max) @ Id, Vgs :

750m Ω @ 2.5A, 10V

Number of Terminations :

3

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Vgs (Max) :

±30V

Current - Continuous Drain (Id) @ 25°C :

10A Tc

DS Breakdown Voltage-Min :

600V