TSM10N60CI C0G
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- Mfr.Part #
- TSM10N60CI C0G
- Manufacturer
- Taiwan Semiconductor
- Package / Case
- TO-220-3 Full Pack, Isolated Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 10A ITO220
- Stock
- 41,470
- In Stock ：
- 41,470
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- Manufacturer :
- Taiwan Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 1738pF @ 25V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 45.8nC @ 10V
- Supplier Device Package :
- ITO-220
- Operating Temperature :
- -55°C~150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 50W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Package / Case :
- TO-220-3 Full Pack, Isolated Tab
- Vgs (Max) :
- ±30V
- Rds On (Max) @ Id, Vgs :
- 750mOhm @ 5A, 10V
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 600V
- Datasheets
- TSM10N60CI C0G
N-Channel 750mOhm @ 5A, 10V ±30V 1738pF @ 25V 45.8nC @ 10V 600V TO-220-3 Full Pack, Isolated Tab
TSM10N60CI C0G Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1738pF @ 25V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 600V.Using drive voltage (10V) reduces this device's overall power consumption.
TSM10N60CI C0G Features
a 600V drain to source voltage (Vdss)
TSM10N60CI C0G Applications
There are a lot of Taiwan Semiconductor Corporation
TSM10N60CI C0G applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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