TSM10N60CI C0

Manufacturer :

Taiwan Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

600V

FET Type :

N-Channel

HTS Code :

8541.29.00.95

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Pulsed Drain Current-Max (IDM) :

38A

Vgs (Max) :

±30V

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.75Ohm

Mounting Type :

Through Hole

Package / Case :

TO-220-3 Full Pack, Isolated Tab

Avalanche Energy Rating (Eas) :

487 mJ

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

750m Ω @ 5A, 10V

Number of Elements :

1

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

9.5A

Power Dissipation-Max :

50W Tc

JEDEC-95 Code :

TO-220AB

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

3

JESD-30 Code :

R-PSFM-T3

Gate Charge (Qg) (Max) @ Vgs :

45.8nC @ 10V

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

600V

Surface Mount :

No

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

1738pF @ 25V