TSM080N03EPQ56 RLG
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- Mfr.Part #
- TSM080N03EPQ56 RLG
- Manufacturer
- Taiwan Semiconductor
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 55A 8PDFN
- Stock
- 38,810
- In Stock ：
- 38,810
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- Manufacturer :
- Taiwan Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Digi-Reel®
- RoHS Status :
- ROHS3 Compliant
- Supplier Device Package :
- 8-PDFN (5x6)
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Drain to Source Voltage (Vdss) :
- 30V
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 20 Weeks
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 54W Tc
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 7.5nC @ 4.5V
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Rds On (Max) @ Id, Vgs :
- 8mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Package / Case :
- 8-PowerTDFN
- Current - Continuous Drain (Id) @ 25°C :
- 55A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 750pF @ 25V
- Datasheets
- TSM080N03EPQ56 RLG
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N-Channel Digi-Reel® 8mOhm @ 16A, 10V ±20V 750pF @ 25V 7.5nC @ 4.5V 30V 8-PowerTDFN
TSM080N03EPQ56 RLG Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 750pF @ 25V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
TSM080N03EPQ56 RLG Features
a 30V drain to source voltage (Vdss)
TSM080N03EPQ56 RLG Applications
There are a lot of Taiwan Semiconductor Corporation
TSM080N03EPQ56 RLG applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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