TSM045NA03CR RLG

Manufacturer :

Taiwan Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Avalanche Energy Rating (Eas) :

104 mJ

Input Capacitance (Ciss) (Max) @ Vds :

1194pF @ 15V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Drain-source On Resistance-Max :

0.0063Ohm

FET Type :

N-Channel

Vgs (Max) :

±20V

DS Breakdown Voltage-Min :

30V

JESD-30 Code :

R-PDSO-F5

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

108A Tc

Terminal Position :

Dual

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Packaging :

Digi-Reel®

Package / Case :

8-PowerTDFN

Power Dissipation-Max :

89W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Surface Mount :

yes

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Factory Lead Time :

32 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

5

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 18A, 10V

Case Connection :

DRAIN

Terminal Form :

Flat

Pulsed Drain Current-Max (IDM) :

432A

Drain to Source Voltage (Vdss) :

30V

Drain Current-Max (Abs) (ID) :

18A