TPWR6003PL,L1Q
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- Mfr.Part #
- TPWR6003PL,L1Q
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 150A 8DSOP
- Stock
- 10,386
- In Stock ：
- 10,386
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Package / Case :
- 8-PowerWDFN
- Operating Temperature :
- 175°C
- Drain to Source Voltage (Vdss) :
- 30V
- Vgs (Max) :
- ±20V
- Packaging :
- Tape and Reel (TR)
- Rds On (Max) @ Id, Vgs :
- 600μ Ω @ 50A, 10V
- Series :
- U-MOSIX-H
- Current - Continuous Drain (Id) @ 25°C :
- 150A Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 10000pF @ 15V
- Vgs(th) (Max) @ Id :
- 2.1V @ 1mA
- Power Dissipation-Max :
- 960mW Ta 170W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Factory Lead Time :
- 16 Weeks
- Mounting Type :
- Surface Mount
- Datasheets
- TPWR6003PL,L1Q
N-Channel Tape & Reel (TR) 600μ Ω @ 50A, 10V ±20V 10000pF @ 15V 110nC @ 10V 30V 8-PowerWDFN
TPWR6003PL,L1Q Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 10000pF @ 15V.Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
TPWR6003PL,L1Q Features
a 30V drain to source voltage (Vdss)
TPWR6003PL,L1Q Applications
There are a lot of Toshiba Semiconductor and Storage
TPWR6003PL,L1Q applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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