TPW1R306PL,L1Q
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- Mfr.Part #
- TPW1R306PL,L1Q
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 260A 8DSOP
- Stock
- 13,538
- In Stock ：
- 13,538
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 260A Tc
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 175°C
- Number of Pins :
- 8
- Factory Lead Time :
- 16 Weeks
- Continuous Drain Current (ID) :
- 260A
- Package / Case :
- 8-PowerVDFN
- Mounting Type :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Mount :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 8100pF @ 30V
- Packaging :
- Tape and Reel (TR)
- Published :
- 2016
- Vgs(th) (Max) @ Id :
- 2.5V @ 1mA
- Rds On (Max) @ Id, Vgs :
- 1.29m Ω @ 50A, 10V
- Drain to Source Voltage (Vdss) :
- 60V
- Gate Charge (Qg) (Max) @ Vgs :
- 91nC @ 10V
- Vgs (Max) :
- ±20V
- Power Dissipation-Max :
- 960mW Ta 170W Tc
- Series :
- U-MOSIX-H
- RoHS Status :
- RoHS Compliant
- Datasheets
- TPW1R306PL,L1Q
N-Channel Tape & Reel (TR) 1.29m Ω @ 50A, 10V ±20V 8100pF @ 30V 91nC @ 10V 60V 8-PowerVDFN
TPW1R306PL,L1Q Applications
• High-Efficiency DC-DC Converters
• Switching Voltage Regulators
• Motor Drivers
TPW1R306PL,L1Q Features
(1) High-speed switching
(2) Small gate charge: QSW = 22 nC (typ.)
(3) Small output charge: Qoss = 77.5 nC (typ.)
(4) Low drain-source on-resistance: RDS(ON) = 0.95 m
Ω (typ.) (VGS = 10 V)
(5) Low leakage current: IDSS = 10
µA (max) (VDS = 60 V)
(6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, I
D = 1.0 mA)
TPW1R306PL,L1Q Overview
N-Channel MOSFET is a type of metal oxide semiconductor field-effect transistor that is categorized under the field-effect transistors (FET). MOSFET transistor operation is based on the capacitor. This type of transistor is also known as an insulated-gate field-effect transistor (IGFET).
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