TPS2819DBVRG4
- Mfr.Part #
- TPS2819DBVRG4
- Manufacturer
- Texas Instruments
- Package / Case
- SC-74A, SOT-753
- Datasheet
- Download
- Description
- IC GATE DRVR LOW-SIDE SOT23-5
- Stock
- 4,947
- In Stock :
- 4,947
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- Manufacturer :
- Texas Instruments
- Product Category :
- Gate Drivers
- Mount :
- Surface Mount
- Gate Type :
- N-Channel MOSFET
- Turn On Delay Time :
- 50 ns
- Supply Voltage1-Nom :
- 10V
- Terminal Form :
- Gull wing
- Width :
- 1.6mm
- Lead Free :
- Lead Free
- Fall Time (Typ) :
- 35 ns
- Input Type :
- Non-Inverting
- Number of Terminations :
- 5
- Interface IC Type :
- BUFFER OR INVERTER BASED MOSFET DRIVER
- Base Part Number :
- TPS2819
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Factory Lead Time :
- 6 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Channel Type :
- Single
- Number of Pins :
- 5
- Height :
- 1.45mm
- Power Dissipation :
- 437mW
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Rise Time :
- 35ns
- Supply Voltage :
- 10V
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- Number of Functions :
- 1
- Length :
- 2.9mm
- Pbfree Code :
- yes
- Driven Configuration :
- Low-Side
- Mounting Type :
- Surface Mount
- Weight :
- 13.012431mg
- High Side Driver :
- yes
- Output Current :
- 2A
- Nominal Supply Current :
- 25μA
- Max Output Current :
- 2A
- Thickness :
- 1.2mm
- Voltage - Supply :
- 4V~14V
- Rise / Fall Time (Typ) :
- 14ns 14ns
- Output Polarity :
- TRUE
- Propagation Delay :
- 50 ns
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -40°C~125°C TA
- Max Power Dissipation :
- 437mW
- Radiation Hardening :
- No
- JESD-609 Code :
- e4
- Logic Voltage - VIL, VIH :
- 1V 4V
- Pin Count :
- 5
- Output Peak Current Limit-Nom :
- 2A
- Number of Outputs :
- 1
- Package / Case :
- SC-74A, SOT-753
- Current - Peak Output (Source, Sink) :
- 2A 2A
- Output Characteristics :
- TOTEM-POLE
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- TPS2819DBVRG4

Gate Drivers Texas Instruments TPS2819DBVRG4 Overview
The Texas Instruments TPS2819DBVRG4 is a robust and efficient gate driver designed for high-performance applications where low-side gate driving is essential. This component, part of the extensive Texas Instruments portfolio, is specifically engineered to enhance the operational capabilities of MOSFETs and IGBTs. With its compact SOT-23-5 package, the TPS2819DBVRG4 ensures minimal footprint on PCBs while delivering high-speed switching capabilities. The integration of this gate driver into your designs guarantees improved switching performance, enhanced system reliability, and reduced power dissipation, making it an ideal choice for demanding electronic environments.
TPS2819DBVRG4 Features
The TPS2819DBVRG4 gate driver from Texas Instruments boasts several key features that make it standout for driving MOSFETs and IGBTs. It offers a wide supply voltage range and fast propagation delays, which are crucial for high-speed applications. Additionally, its robust output drive and rail-to-rail output capability ensure reliable switching even under fluctuating conditions. The device also includes built-in UVLO (Under-Voltage Lock-Out), enhancing the safety and efficiency of the driving application.
TPS2819DBVRG4 Applications
- Power Supplies: The TPS2819DBVRG4 can be used in switching power supplies to improve efficiency and response times by driving the low-side switches more effectively.
- Motor Control: In motor control circuits, this gate driver helps in achieving more precise control and higher efficiency by reliably switching the power stages.
- Solar Inverters: Utilized in solar inverters, the TPS2819DBVRG4 contributes to more efficient power conversion processes, essential for maximizing energy harnessing from photovoltaic cells.
- LED Lighting: In LED lighting systems, it drives MOSFETs responsible for dimming and switching, thus enhancing the overall efficiency and longevity of the lighting system.
- Automotive Electronics: The robust nature of the TPS2819DBVRG4 makes it suitable for automotive applications where high temperature and voltage conditions are common.
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