TPS2819DBVRG4
- Mfr.Part #
- TPS2819DBVRG4
- Manufacturer
- Texas Instruments
- Package / Case
- SC-74A, SOT-753
- Datasheet
- Download
- Description
- IC GATE DRVR LOW-SIDE SOT23-5
- Stock
- 4,947
- In Stock :
- 4,947
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- Manufacturer :
- Texas Instruments
- Product Category :
- Gate Drivers
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Base Part Number :
- TPS2819
- Length :
- 2.9mm
- Pin Count :
- 5
- Driven Configuration :
- Low-Side
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Operating Temperature :
- -40°C~125°C TA
- Mount :
- Surface Mount
- Number of Functions :
- 1
- Rise Time :
- 35ns
- Terminal Form :
- Gull wing
- Turn On Delay Time :
- 50 ns
- Package / Case :
- SC-74A, SOT-753
- Width :
- 1.6mm
- ECCN Code :
- EAR99
- Number of Terminations :
- 5
- Supply Voltage1-Nom :
- 10V
- Nominal Supply Current :
- 25μA
- Input Type :
- Non-Inverting
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 437mW
- Output Polarity :
- TRUE
- Supply Voltage :
- 10V
- Power Dissipation :
- 437mW
- Rise / Fall Time (Typ) :
- 14ns 14ns
- Voltage - Supply :
- 4V~14V
- Fall Time (Typ) :
- 35 ns
- Weight :
- 13.012431mg
- Max Output Current :
- 2A
- Pbfree Code :
- yes
- Output Current :
- 2A
- Mounting Type :
- Surface Mount
- Number of Outputs :
- 1
- Logic Voltage - VIL, VIH :
- 1V 4V
- Current - Peak Output (Source, Sink) :
- 2A 2A
- High Side Driver :
- yes
- Thickness :
- 1.2mm
- Channel Type :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Output Peak Current Limit-Nom :
- 2A
- Radiation Hardening :
- No
- Terminal Position :
- Dual
- Propagation Delay :
- 50 ns
- JESD-609 Code :
- e4
- Gate Type :
- N-Channel MOSFET
- Factory Lead Time :
- 6 Weeks
- Output Characteristics :
- TOTEM-POLE
- Peak Reflow Temperature (Cel) :
- 260
- Interface IC Type :
- BUFFER OR INVERTER BASED MOSFET DRIVER
- Height :
- 1.45mm
- Number of Pins :
- 5
- Datasheets
- TPS2819DBVRG4

Gate Drivers Texas Instruments TPS2819DBVRG4 Overview
The Texas Instruments TPS2819DBVRG4 is a robust and efficient gate driver designed for high-performance applications where low-side gate driving is essential. This component, part of the extensive Texas Instruments portfolio, is specifically engineered to enhance the operational capabilities of MOSFETs and IGBTs. With its compact SOT-23-5 package, the TPS2819DBVRG4 ensures minimal footprint on PCBs while delivering high-speed switching capabilities. The integration of this gate driver into your designs guarantees improved switching performance, enhanced system reliability, and reduced power dissipation, making it an ideal choice for demanding electronic environments.
TPS2819DBVRG4 Features
The TPS2819DBVRG4 gate driver from Texas Instruments boasts several key features that make it standout for driving MOSFETs and IGBTs. It offers a wide supply voltage range and fast propagation delays, which are crucial for high-speed applications. Additionally, its robust output drive and rail-to-rail output capability ensure reliable switching even under fluctuating conditions. The device also includes built-in UVLO (Under-Voltage Lock-Out), enhancing the safety and efficiency of the driving application.
TPS2819DBVRG4 Applications
- Power Supplies: The TPS2819DBVRG4 can be used in switching power supplies to improve efficiency and response times by driving the low-side switches more effectively.
- Motor Control: In motor control circuits, this gate driver helps in achieving more precise control and higher efficiency by reliably switching the power stages.
- Solar Inverters: Utilized in solar inverters, the TPS2819DBVRG4 contributes to more efficient power conversion processes, essential for maximizing energy harnessing from photovoltaic cells.
- LED Lighting: In LED lighting systems, it drives MOSFETs responsible for dimming and switching, thus enhancing the overall efficiency and longevity of the lighting system.
- Automotive Electronics: The robust nature of the TPS2819DBVRG4 makes it suitable for automotive applications where high temperature and voltage conditions are common.
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