TPN2R304PL,L1Q
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- Mfr.Part #
- TPN2R304PL,L1Q
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 80A 8TSON
- Stock
- 40,049
- In Stock ：
- 40,049
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On Max :
- 2.3 mΩ
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Power Dissipation-Max :
- 630mW Ta 104W Tc
- Drain to Source Voltage (Vdss) :
- 40V
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Factory Lead Time :
- 12 Weeks
- Supplier Device Package :
- 8-TSON Advance (3.3x3.3)
- Series :
- U-MOSIX-H
- Input Capacitance :
- 3.6nF
- FET Type :
- N-Channel
- RoHS Status :
- RoHS Compliant
- Continuous Drain Current (ID) :
- 80A
- Vgs (Max) :
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3600pF @ 20V
- Mounting Type :
- Surface Mount
- Published :
- 2016
- Operating Temperature :
- 175°C
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Number of Pins :
- 8
- Gate Charge (Qg) (Max) @ Vgs :
- 41nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 2.3mOhm @ 40A, 10V
- Package / Case :
- 8-PowerVDFN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 2.4V @ 0.3mA
- Datasheets
- TPN2R304PL,L1Q
N-Channel Tape & Reel (TR) 2.3mOhm @ 40A, 10V ±20V 3600pF @ 20V 41nC @ 10V 40V 8-PowerVDFN
TPN2R304PL,L1Q Description
Silicon N-channel MOS (U-MOS -H) MOSFETs
TPN2R304PL,L1Q Features
-
accelerated switching
-
Low gate charge: 10.8 nC for QSW (typ.)
-
Minimum output charge: 27 nC for Qoss (typ.)
-
Low drain-source on resistance: RDS(ON) = 1.8 m (typical); VGS = 10 V
-
Low leakage current: VDS = 40 V, IDSS = 10 A (maximum).
-
Vth = 1.4 to 2.4 V (VDS = 10 V, I D = 0.3 mA) is the enhancement mode.
TPN2R304PL,L1Q Applications
-
DC-DC converters with high efficiency
-
Voltage regulators that switch
-
Auto-Driving
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