TPH6R003NL,LQ

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

30V

Turn-Off Delay Time :

18 ns

Power Dissipation-Max :

1.6W Ta 34W Tc

Min Operating Temperature :

-55°C

RoHS Status :

RoHS Compliant

Operating Temperature :

150°C TJ

Published :

2014

Rise Time :

4.1ns

Drain to Source Resistance :

6.8mOhm

Series :

U-MOSVIII-H

Packaging :

Tape and Reel (TR)

Max Operating Temperature :

150°C

Input Capacitance :

1.4nF

Number of Channels :

1

Continuous Drain Current (ID) :

38A

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

38A Tc

Package / Case :

8-PowerVDFN

Mounting Type :

Surface Mount

Supplier Device Package :

8-SOP Advance (5x5)

Weight :

850.995985mg

Radiation Hardening :

No

Rds On Max :

6 mΩ

Vgs(th) (Max) @ Id :

2.3V @ 200μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Fall Time (Typ) :

3.3 ns

Rds On (Max) @ Id, Vgs :

6mOhm @ 19A, 10V

Number of Pins :

8

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

16 Weeks

Drain to Source Breakdown Voltage :

30V

Turn On Delay Time :

11 ns

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 15V