TPH4R008NH,L1Q
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- Mfr.Part #
- TPH4R008NH,L1Q
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 60A 8SOP
- Stock
- 1,067
- In Stock ：
- 1,067
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- 150°C TJ
- Vgs (Max) :
- ±20V
- Continuous Drain Current (ID) :
- 60A
- Published :
- 2014
- Power Dissipation-Max :
- 1.6W Ta 78W Tc
- Drain to Source Voltage (Vdss) :
- 80V
- RoHS Status :
- RoHS Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Fall Time (Typ) :
- 12 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 5300pF @ 40V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 59nC @ 10V
- Element Configuration :
- Single
- Factory Lead Time :
- 12 Weeks
- Packaging :
- Cut Tape (CT)
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Gate to Source Voltage (Vgs) :
- 20V
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 4m Ω @ 30A, 10V
- Rise Time :
- 86ns
- Mount :
- Surface Mount
- Turn-Off Delay Time :
- 52 ns
- FET Type :
- N-Channel
- Number of Pins :
- 8
- Package / Case :
- 8-PowerVDFN
- Series :
- U-MOSVIII-H
- Current - Continuous Drain (Id) @ 25°C :
- 60A Tc
- Datasheets
- TPH4R008NH,L1Q
N-Channel Cut Tape (CT) 4m Ω @ 30A, 10V ±20V 5300pF @ 40V 59nC @ 10V 80V 8-PowerVDFN
TPH4R008NH,L1Q Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 5300pF @ 40V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 60A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 52 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 80V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
TPH4R008NH,L1Q Features
a continuous drain current (ID) of 60A
the turn-off delay time is 52 ns
a 80V drain to source voltage (Vdss)
TPH4R008NH,L1Q Applications
There are a lot of Toshiba Semiconductor and Storage
TPH4R008NH,L1Q applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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