TPH3300CNH,L1Q

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Mfr.Part #
TPH3300CNH,L1Q
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
8-PowerVDFN
Datasheet
Download
Description
MOSFET N-CH 150V 18A 8SOP
Stock
18,252
In Stock :
18,252

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Temperature :
150°C TJ
Number of Pins :
8
Mount :
Surface Mount
Weight :
850.995985mg
Turn-Off Delay Time :
17 ns
Drain to Source Breakdown Voltage :
150V
Published :
2014
Radiation Hardening :
No
Vgs(th) (Max) @ Id :
4V @ 300μA
Mounting Type :
Surface Mount
Rds On (Max) @ Id, Vgs :
33m Ω @ 9A, 10V
Fall Time (Typ) :
5.1 ns
Continuous Drain Current (ID) :
18A
Current - Continuous Drain (Id) @ 25°C :
18A Ta
Turn On Delay Time :
16 ns
Series :
U-MOSVIII-H
Vgs (Max) :
±20V
Number of Channels :
1
FET Type :
N-Channel
Rise Time :
5.8ns
Input Capacitance (Ciss) (Max) @ Vds :
1100pF @ 75V
Packaging :
Tape and Reel (TR)
Gate to Source Voltage (Vgs) :
20V
Element Configuration :
Single
Package / Case :
8-PowerVDFN
Power Dissipation-Max :
1.6W Ta 57W Tc
Drive Voltage (Max Rds On,Min Rds On) :
10V
RoHS Status :
RoHS Compliant
Factory Lead Time :
12 Weeks
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate Charge (Qg) (Max) @ Vgs :
10.6nC @ 10V
Datasheets
TPH3300CNH,L1Q
Introducing Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TPH3300CNH,L1Q from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Number of Pins:8, Mounting Type:Surface Mount, Number of Channels:1, Package / Case:8-PowerVDFN, TPH3300CNH,L1Q pinout, TPH3300CNH,L1Q datasheet PDF, TPH3300CNH,L1Q amp .Beyond Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TPH3300CNH,L1Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation TPH3300CNH,L1Q


N-Channel Tape & Reel (TR) 33m Ω @ 9A, 10V ±20V 1100pF @ 75V 10.6nC @ 10V 8-PowerVDFN

TPH3300CNH,L1Q Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1100pF @ 75V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 18A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=150V. And this device has 150V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 17 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 16 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (10V), this device helps reduce its overall power consumption.

TPH3300CNH,L1Q Features


a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 17 ns


TPH3300CNH,L1Q Applications


There are a lot of Toshiba Semiconductor and Storage
TPH3300CNH,L1Q applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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