TPH11006NL,LQ
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- Mfr.Part #
- TPH11006NL,LQ
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 17A 8SOP
- Stock
- 10,316
- In Stock ：
- 10,316
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±20V
- Package / Case :
- 8-PowerVDFN
- Number of Channels :
- 1
- Number of Pins :
- 8
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 20V
- Continuous Drain Current (ID) :
- 17A
- Number of Elements :
- 1
- Terminal Form :
- Flat
- JESD-30 Code :
- S-PDSO-F5
- Turn-Off Delay Time :
- 27 ns
- Number of Terminations :
- 5
- Mount :
- Surface Mount
- Series :
- U-MOSVIII-H
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- FET Type :
- N-Channel
- RoHS Status :
- RoHS Compliant
- Drain Current-Max (Abs) (ID) :
- 40A
- Vgs(th) (Max) @ Id :
- 2.5V @ 200μA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 23nC @ 10V
- Rise Time :
- 4ns
- Rds On (Max) @ Id, Vgs :
- 11.4m Ω @ 8.5A, 10V
- Drain to Source Voltage (Vdss) :
- 60V
- Transistor Application :
- SWITCHING
- Avalanche Energy Rating (Eas) :
- 33 mJ
- Fall Time (Typ) :
- 7.1 ns
- Weight :
- 850.995985mg
- Factory Lead Time :
- 16 Weeks
- Power Dissipation-Max :
- 1.6W Ta 34W Tc
- Turn On Delay Time :
- 11 ns
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 2000pF @ 30V
- Published :
- 2014
- Case Connection :
- DRAIN
- DS Breakdown Voltage-Min :
- 60V
- Terminal Position :
- Dual
- Current - Continuous Drain (Id) @ 25°C :
- 17A Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- 150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Datasheets
- TPH11006NL,LQ
N-Channel Tape & Reel (TR) 11.4m Ω @ 8.5A, 10V ±20V 2000pF @ 30V 23nC @ 10V 60V 8-PowerVDFN
TPH11006NL,LQ Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 33 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2000pF @ 30V.This device conducts a continuous drain current (ID) of 17A, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 40A.When the device is turned off, a turn-off delay time of 27 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 11 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 60V.This transistor requires a drain-source voltage (Vdss) of 60V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
TPH11006NL,LQ Features
the avalanche energy rating (Eas) is 33 mJ
a continuous drain current (ID) of 17A
the turn-off delay time is 27 ns
a 60V drain to source voltage (Vdss)
TPH11006NL,LQ Applications
There are a lot of Toshiba Semiconductor and Storage
TPH11006NL,LQ applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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