TPCA8016-H(TE12LQM
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- Mfr.Part #
- TPCA8016-H(TE12LQM
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 25A 8-SOPA
- Stock
- 49,415
- In Stock ：
- 49,415
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- 8-PowerVDFN
- RoHS Status :
- RoHS Compliant
- Supplier Device Package :
- 8-SOP Advance (5x5)
- Min Operating Temperature :
- -55°C
- Mount :
- Surface Mount
- Max Power Dissipation :
- 45W
- Max Operating Temperature :
- 150°C
- Gate to Source Voltage (Vgs) :
- 20V
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 45W
- Rds On (Max) @ Id, Vgs :
- 21mOhm @ 13A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1375pF @ 10V
- Drain to Source Voltage (Vdss) :
- 60V
- Packaging :
- Digi-Reel®
- Current - Continuous Drain (Id) @ 25°C :
- 25A Ta
- Published :
- 2006
- Fall Time (Typ) :
- 3 ns
- Rise Time :
- 4ns
- Continuous Drain Current (ID) :
- 25A
- Drain to Source Resistance :
- 21mOhm
- Rds On Max :
- 21 mΩ
- FET Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 60V
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 22nC @ 10V
- Number of Pins :
- 8
- Input Capacitance :
- 1.375nF
- Vgs(th) (Max) @ Id :
- 2.3V @ 1mA
- Datasheets
- TPCA8016-H(TE12LQM
N-Channel Digi-Reel® 21mOhm @ 13A, 10V 1375pF @ 10V 22nC @ 10V 60V 8-PowerVDFN
TPCA8016-H(TE12LQM Overview
A device's maximum input capacitance is 1375pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 25A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=60V, and this device has a drain-to-source breakdown voltage of 60V voltage.The Drain-to-Source Resistance (DTS) of a MOSFET is 21mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 60V drain to source voltage (Vdss).
TPCA8016-H(TE12LQM Features
a continuous drain current (ID) of 25A
a drain-to-source breakdown voltage of 60V voltage
single MOSFETs transistor is 21mOhm
a 60V drain to source voltage (Vdss)
TPCA8016-H(TE12LQM Applications
There are a lot of Toshiba Semiconductor and Storage
TPCA8016-H(TE12LQM applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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