TP89R103NL,LQ

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

2.3 ns

Power Dissipation-Max :

1W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

RoHS Status :

RoHS Compliant

Terminal Form :

Gull wing

Number of Pins :

8

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Number of Channels :

1

Series :

U-MOSVIII-H

Published :

2014

Vgs (Max) :

±20V

Terminal Position :

Dual

Operating Temperature :

150°C TJ

Continuous Drain Current (ID) :

15A

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Turn On Delay Time :

8.4 ns

Rds On (Max) @ Id, Vgs :

9.1m Ω @ 7.5A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Turn-Off Delay Time :

14 ns

Vgs(th) (Max) @ Id :

2.3V @ 100μA

Number of Terminations :

8

Drain to Source Breakdown Voltage :

30V

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

820pF @ 15V

Factory Lead Time :

12 Weeks

Weight :

850.995985mg

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mount :

Surface Mount

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Rise Time :

2.3ns

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

9.8nC @ 10V

Feedback Cap-Max (Crss) :

52 pF