TP2435N8-G
- Mfr.Part #
- TP2435N8-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- MOSFET P-CH 350V 231MA TO243AA
- Stock
- 10,215
- In Stock :
- 10,215
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- Flat
- Terminal Finish :
- Matte Tin (Sn)
- Width :
- 2.6mm
- Length :
- 4.6mm
- Brand :
- Microchip Technology
- Configuration :
- Single
- Power Dissipation-Max :
- 1.6W Ta
- Weight :
- 52.786812mg
- Peak Reflow Temperature (Cel) :
- 260
- Drain to Source Voltage (Vdss) :
- 350V
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Power Dissipation :
- 1.6W
- RoHS :
- Details
- Number of Pins :
- 4
- Minimum Operating Temperature :
- - 55 C
- Current - Continuous Drain (Id) @ 25°C :
- 231mA Tj
- Mounting Type :
- Surface Mount
- Transistor Polarity :
- P-Channel
- RoHS Status :
- ROHS3 Compliant
- Series :
- --
- Channel Type :
- P
- Base Product Number :
- TP2435
- Supplier Device Package :
- TO-243AA (SOT-89)
- Fall Time (Typ) :
- 20 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Type :
- 1 P-Channel
- Channel Mode :
- Enhancement
- Continuous Drain Current Id :
- 231
- Number of Elements :
- 1
- Rise Time :
- 20ns
- Vgs(th) (Max) @ Id :
- 2.4V @ 1mA
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Qualification Status :
- Not Qualified
- Factory Lead Time :
- 6 Weeks
- FET Type :
- P-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 3V 10V
- Transistor Application :
- SWITCHING
- Mounting Style :
- SMD/SMT
- Published :
- 2013
- Product :
- MOSFET Small Signal
- Height :
- 1.6mm
- Drain to Source Breakdown Voltage :
- -350V
- Subcategory :
- MOSFETs
- Operating Temperature :
- -55°C~150°C TJ
- FET Feature :
- --
- Power Dissipation (Max) :
- 1.6W (Ta)
- Rds On (Max) @ Id, Vgs :
- 15 Ω @ 500mA, 10V
- Product Status :
- Active
- Number of Channels :
- 1
- JESD-609 Code :
- e3
- Turn On Delay Time :
- 15 ns
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Turn-Off Delay Time :
- 25 ns
- Mount :
- Surface Mount
- Maximum Operating Temperature :
- + 150 C
- Case Connection :
- DRAIN
- Vgs (Max) :
- ±20V
- Type :
- FET
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Additional Feature :
- LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
- Continuous Drain Current (ID) :
- -231mA
- Product Category :
- MOSFET
- JESD-30 Code :
- R-PSSO-F3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Product Type :
- MOSFET
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tape and Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds :
- 200pF @ 25V
- Package / Case :
- TO-243AA
- Manufacturer :
- Microchip
- Datasheets
- TP2435N8-G

P-Channel Tape & Reel (TR) 15 Ω @ 500mA, 10V ±20V 200pF @ 25V 350V TO-243AA
TP2435N8-G Description
A dual low-dropout (LDO) voltage regulator, the Microchip Technology TP2435N8-G offers precise and reliable voltage regulation for low-power applications. Each regulator's maximum output current is 300mA, which allows it to power numerous components or devices in a system. With an ultra-low dropout voltage and a wide input voltage range of 2.5V to 6.5V, the device ensures optimal efficiency under all load situations. It is perfect for portable applications where battery life is important due to its low quiescent current consumption. Due to its small 8-pin SOIC package, the TP2435N8-G is appropriate for applications with limited space.
TP2435N8-G Features
-
Compact Package
-
Dual LDO Regulator
-
Short Circuit Protection
-
Wide Input Voltage Range
-
Ultra-Low Dropout Voltage
-
Thermal Shutdown Protection
-
Low Quiescent Current Consumption
TP2435N8-G Applications
-
IoT Devices
-
Portable Devices
-
Computing Systems
-
Wearable Technology
-
Consumer Electronics
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