TP2104N3-G
- Mfr.Part #
- TP2104N3-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- MOSFET P-CH 40V 175MA TO92-3
- Stock
- 7,075
- In Stock :
- 7,075
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Product Category :
- MOSFET
- Supplier Device Package :
- TO-92-3
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Weight :
- 453.59237mg
- FET Type :
- P-Channel
- Drain to Source Voltage (Vdss) :
- 40V
- Drain to Source Breakdown Voltage :
- -40V
- Terminal Position :
- BOTTOM
- Base Product Number :
- TP2104
- Rds On (Max) @ Id, Vgs :
- 6 Ω @ 500mA, 10V
- Fall Time (Typ) :
- 4 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 60pF @ 25V
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- Packaging :
- Bulk
- Terminal Finish :
- Matte Tin (Sn)
- Number of Elements :
- 1
- Polarity :
- P
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Current - Continuous Drain (Id) @ 25°C :
- 175mA Tj
- Channel Type :
- P
- Transistor Element Material :
- SILICON
- Rad Hardened :
- No
- Mount :
- Through Hole
- Vgs (Max) :
- ±20V
- Drain-source On Resistance-Max :
- 6Ohm
- Subcategory :
- MOSFETs
- Mounting Style :
- Through Hole
- Power Dissipation-Max :
- 740mW Ta
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- ECCN Code :
- EAR99
- Operating Temperature Classification :
- Military
- Continuous Drain Current Id :
- 175
- Power Dissipation (Max) :
- 740mW (Ta)
- Series :
- -
- JESD-609 Code :
- e3
- Gate to Source Voltage (Vgs) :
- 20V
- Mounting Type :
- Through Hole
- Transistor Type :
- 1 P-Channel
- Power Dissipation :
- 740mW
- Rise Time :
- 4ns
- Qualification :
- -
- Product Status :
- Active
- Length :
- 5.21mm
- RoHS :
- Details
- Gate-Source Voltage (Max) :
- ±20(V)
- Transistor Polarity :
- P-Channel
- Mounting :
- Through Hole
- Configuration :
- Single
- Turn-Off Delay Time :
- 5 ns
- Continuous Drain Current (ID) :
- -250mA
- Qualification Status :
- Not Qualified
- Operating Temp Range :
- -55C to 150C
- Package Type :
- TO-92
- Transistor Application :
- SWITCHING
- Minimum Operating Temperature :
- -55 °C
- FET Feature :
- -
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Channel Mode :
- Enhancement
- Continuous Drain Current :
- 0.175(A)
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Factory Lead Time :
- 6 Weeks
- Number of Elements per Chip :
- 1
- Package :
- Bag
- Turn On Delay Time :
- 4 ns
- Height :
- 5.33mm
- Number of Channels :
- 1
- MSL :
- -
- Maximum Operating Temperature :
- +150 °C
- Type :
- Power MOSFET
- Product Type :
- MOSFET
- Number of Terminations :
- 3
- Drain-Source On-Volt :
- 40(V)
- Published :
- 2013
- Product :
- MOSFET Small Signal
- Manufacturer :
- Microchip
- Additional Feature :
- LOW THRESHOLD
- Operating Mode :
- ENHANCEMENT MODE
- Width :
- 4.19mm
- Brand :
- Microchip Technology / Atmel
- Datasheets
- TP2104N3-G
,TO-226_straightlead.jpg)
P-Channel Bulk 6 Ω @ 500mA, 10V ±20V 60pF @ 25V 40V TO-226-3, TO-92-3 (TO-226AA)
TP2104N3-G Overview
A device's maximal input capacitance is 60pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is -250mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -40V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 5 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 4 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 40V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
TP2104N3-G Features
a continuous drain current (ID) of -250mA
a drain-to-source breakdown voltage of -40V voltage
the turn-off delay time is 5 ns
a 40V drain to source voltage (Vdss)
TP2104N3-G Applications
There are a lot of Microchip Technology
TP2104N3-G applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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