TP0202K-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

Vgs(th) (Max) @ Id :

3V @ 250µA

Terminal Position :

Dual

Gate to Source Voltage (Vgs) :

20V

Series :

TrenchFET®

Transistor Application :

SWITCHING

Threshold Voltage :

-2V

Rise Time :

6ns

ECCN Code :

EAR99

Power Dissipation :

350mW

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 500mA, 10V

Published :

2011

Continuous Drain Current (ID) :

-385A

Turn On Delay Time :

9 ns

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

30V

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

31pF @ 15V

REACH SVHC :

Unknown

Power Dissipation-Max :

350mW Ta

Element Configuration :

Single

Voltage :

20V

Terminal Finish :

Matte Tin (Sn)

RoHS Status :

ROHS3 Compliant

Nominal Vgs :

-1.3 V

Fall Time (Typ) :

6 ns

Package / Case :

TO-236-3, SC-59, SOT-23-3

Current :

4A

JESD-609 Code :

e3

Number of Elements :

1

Transistor Element Material :

SILICON

Number of Pins :

3

Mount :

Surface Mount

Resistance :

3.5Ohm

Pbfree Code :

yes

Turn-Off Delay Time :

30 ns

Current - Continuous Drain (Id) @ 25°C :

385mA Ta

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

1nC @ 10V