TP0202K-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

385mA Ta

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pbfree Code :

yes

Number of Elements :

1

Turn On Delay Time :

9 ns

Gate to Source Voltage (Vgs) :

20V

Resistance :

3.5Ohm

Terminal Form :

Gull wing

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

TO-236-3, SC-59, SOT-23-3

Published :

2011

Rise Time :

6ns

Power Dissipation-Max :

350mW Ta

Terminal Finish :

Matte Tin (Sn)

Turn-Off Delay Time :

30 ns

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

6 ns

Current :

4A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Continuous Drain Current (ID) :

-385A

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Nominal Vgs :

-1.3 V

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 500mA, 10V

ECCN Code :

EAR99

Vgs (Max) :

±20V

Voltage :

20V

Series :

TrenchFET®

REACH SVHC :

Unknown

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

31pF @ 15V

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

3V @ 250µA

Transistor Element Material :

SILICON

Number of Terminations :

3

Threshold Voltage :

-2V

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

1nC @ 10V

FET Type :

P-Channel

Drain to Source Voltage (Vdss) :

30V

Power Dissipation :

350mW