TP0101K-T1-E3
- Mfr.Part #
- TP0101K-T1-E3
- Manufacturer
- Vishay
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 0.58A SOT23-3
- Stock
- 23,290
- In Stock :
- 23,290
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 3
- Fall Time (Typ) :
- 30 ns
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Number of Pins :
- 3
- Length :
- 3.04mm
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Height :
- 1.02mm
- Width :
- 1.4mm
- Peak Reflow Temperature (Cel) :
- 260
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Voltage (Vdss) :
- 20V
- Vgs(th) (Max) @ Id :
- 1V @ 50μA
- Resistance :
- 650mOhm
- Rise Time :
- 30ns
- Turn-Off Delay Time :
- 55 ns
- Additional Feature :
- LOW THRESHOLD
- Gate to Source Voltage (Vgs) :
- 8V
- FET Type :
- P-Channel
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 650m Ω @ 580mA, 4.5V
- Packaging :
- Cut Tape (CT)
- Terminal Finish :
- Matte Tin (Sn)
- Nominal Vgs :
- -700 mV
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Series :
- TrenchFET®
- Max Operating Temperature :
- 150°C
- Max Power Dissipation :
- 350mW
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Threshold Voltage :
- 700mV
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2014
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 2.2nC @ 4.5V
- Min Operating Temperature :
- -55°C
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Continuous Drain Current (ID) :
- -580mA
- Power Dissipation :
- 350mW
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Terminal Position :
- Dual
- Turn On Delay Time :
- 25 ns
- Drain Current-Max (Abs) (ID) :
- 0.58A
- REACH SVHC :
- No SVHC
- Drain to Source Breakdown Voltage :
- -20V
- Datasheets
- TP0101K-T1-E3

P-Channel Cut Tape (CT) 650m Ω @ 580mA, 4.5V 2.2nC @ 4.5V 20V TO-236-3, SC-59, SOT-23-3
TP0101K-T1-E3 Overview
In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -20V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -20V.There is no drain current on this device since the maximum continuous current it can conduct is 0.58A.As a result of its turn-off delay time, which is 55 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 25 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 8VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 700mV.The transistor must receive a 20V drain to source voltage (Vdss) in order to function.
TP0101K-T1-E3 Features
a continuous drain current (ID) of -580mA
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 55 ns
a threshold voltage of 700mV
a 20V drain to source voltage (Vdss)
TP0101K-T1-E3 Applications
There are a lot of Vishay Siliconix
TP0101K-T1-E3 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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