TP0101K-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-236-3, SC-59, SOT-23-3

Drain Current-Max (Abs) (ID) :

0.58A

Number of Elements :

1

Width :

1.4mm

Gate Charge (Qg) (Max) @ Vgs :

2.2nC @ 4.5V

Height :

1.02mm

Packaging :

Cut Tape (CT)

FET Type :

P-Channel

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

LOW THRESHOLD

JESD-609 Code :

e3

Turn On Delay Time :

25 ns

Resistance :

650mOhm

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

-580mA

Max Power Dissipation :

350mW

Fall Time (Typ) :

30 ns

Drain to Source Breakdown Voltage :

-20V

Transistor Application :

SWITCHING

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

8V

Terminal Finish :

Matte Tin (Sn)

Length :

3.04mm

Lead Free :

Lead Free

Rise Time :

30ns

Series :

TrenchFET®

Drain to Source Voltage (Vdss) :

20V

Peak Reflow Temperature (Cel) :

260

Number of Pins :

3

Pin Count :

3

Turn-Off Delay Time :

55 ns

Pbfree Code :

yes

Published :

2014

Threshold Voltage :

700mV

Nominal Vgs :

-700 mV

Time@Peak Reflow Temperature-Max (s) :

40

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

1V @ 50μA

Power Dissipation :

350mW

Number of Terminations :

3

Mount :

Surface Mount

Max Operating Temperature :

150°C

Min Operating Temperature :

-55°C

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

650m Ω @ 580mA, 4.5V

REACH SVHC :

No SVHC