TP0101K-T1-E3
- Mfr.Part #
- TP0101K-T1-E3
- Manufacturer
- Vishay
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 0.58A SOT23-3
- Stock
- 23,290
- In Stock :
- 23,290
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 8V
- Terminal Form :
- Gull wing
- Length :
- 3.04mm
- Height :
- 1.02mm
- Published :
- 2014
- Drain Current-Max (Abs) (ID) :
- 0.58A
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 55 ns
- Width :
- 1.4mm
- Drain to Source Breakdown Voltage :
- -20V
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Power Dissipation :
- 350mW
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Min Operating Temperature :
- -55°C
- Nominal Vgs :
- -700 mV
- Radiation Hardening :
- No
- Rise Time :
- 30ns
- Number of Terminations :
- 3
- Max Operating Temperature :
- 150°C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 1V @ 50μA
- Threshold Voltage :
- 700mV
- Additional Feature :
- LOW THRESHOLD
- Terminal Finish :
- Matte Tin (Sn)
- FET Type :
- P-Channel
- Turn On Delay Time :
- 25 ns
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Resistance :
- 650mOhm
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 350mW
- Operating Mode :
- ENHANCEMENT MODE
- Number of Pins :
- 3
- Packaging :
- Cut Tape (CT)
- Drain to Source Voltage (Vdss) :
- 20V
- Peak Reflow Temperature (Cel) :
- 260
- Series :
- TrenchFET®
- Rds On (Max) @ Id, Vgs :
- 650m Ω @ 580mA, 4.5V
- Pin Count :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 2.2nC @ 4.5V
- RoHS Status :
- ROHS3 Compliant
- Fall Time (Typ) :
- 30 ns
- Continuous Drain Current (ID) :
- -580mA
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Datasheets
- TP0101K-T1-E3

P-Channel Cut Tape (CT) 650m Ω @ 580mA, 4.5V 2.2nC @ 4.5V 20V TO-236-3, SC-59, SOT-23-3
TP0101K-T1-E3 Overview
In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -20V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -20V.There is no drain current on this device since the maximum continuous current it can conduct is 0.58A.As a result of its turn-off delay time, which is 55 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 25 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 8VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 700mV.The transistor must receive a 20V drain to source voltage (Vdss) in order to function.
TP0101K-T1-E3 Features
a continuous drain current (ID) of -580mA
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 55 ns
a threshold voltage of 700mV
a 20V drain to source voltage (Vdss)
TP0101K-T1-E3 Applications
There are a lot of Vishay Siliconix
TP0101K-T1-E3 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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