TN6729A_D26Z

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Mfr.Part #
TN6729A_D26Z
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 Long Body (Formed Leads)
Datasheet
Download
Description
TRANS PNP 80V 1A TO226
Stock
27,225
In Stock :
27,225

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Mounting Type :
Through Hole
Packaging :
Tape and Reel (TR)
Package / Case :
TO-226-3, TO-92-3 Long Body (Formed Leads)
Transistor Type :
PNP
Vce Saturation (Max) @ Ib, Ic :
500mV @ 10mA, 250mA
Current - Collector Cutoff (Max) :
100nA ICBO
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Polarity :
PNP
Min Operating Temperature :
-55°C
Max Power Dissipation :
1W
Base Part Number :
TN6729A
Max Operating Temperature :
150°C
Collector Emitter Voltage (VCEO) :
80V
Number of Elements :
1
hFE Min :
20
Power Dissipation :
1W
Mount :
Through Hole
Number of Pins :
3
Element Configuration :
Single
Power - Max :
1W
DC Current Gain (hFE) (Min) @ Ic, Vce :
50 @ 250mA 1V
Collector Emitter Breakdown Voltage :
80V
Emitter Base Voltage (VEBO) :
5V
Supplier Device Package :
TO-226
Collector Base Voltage (VCBO) :
80V
Current - Collector (Ic) (Max) :
1A
RoHS Status :
RoHS Compliant
Operating Temperature :
-55°C~150°C TJ
Max Collector Current :
1A
Voltage - Collector Emitter Breakdown (Max) :
80V
Datasheets
TN6729A_D26Z
Introducing Transistors - Bipolar (BJT) - Single onsemi TN6729A_D26Z from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-226-3, TO-92-3 Long Body (Formed Leads), Base Part Number:TN6729A, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, TN6729A_D26Z pinout, TN6729A_D26Z datasheet PDF, TN6729A_D26Z amp .Beyond Transistors - Bipolar (BJT) - Single onsemi TN6729A_D26Z ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi TN6729A_D26Z


PNP -55°C~150°C TJ 100nA ICBO 1 Elements TO-226-3, TO-92-3 Long Body (Formed Leads) Tape & Reel (TR) Through Hole

TN6729A_D26Z Overview


This device has a DC current gain of 50 @ 250mA 1V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 10mA, 250mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Product package TO-226 comes from the supplier.Collector Emitter Breakdown occurs at 80VV - Maximum voltage.A maximum collector current of 1A volts is possible.

TN6729A_D26Z Features


the DC current gain for this device is 50 @ 250mA 1V
the vce saturation(Max) is 500mV @ 10mA, 250mA
the emitter base voltage is kept at 5V
the supplier device package of TO-226


TN6729A_D26Z Applications


There are a lot of ON Semiconductor
TN6729A_D26Z applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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