TN0201K-T1-E3
- Mfr.Part #
- TN0201K-T1-E3
- Manufacturer
- Vishay
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 420MA SOT23-3
- Stock
- 21,518
- In Stock :
- 21,518
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- Gull wing
- Rds On (Max) @ Id, Vgs :
- 1 Ω @ 300mA, 10V
- Rise Time :
- 8ns
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Operating Mode :
- ENHANCEMENT MODE
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Drain to Source Breakdown Voltage :
- 20V
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2009
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Nominal Vgs :
- 1 V
- Number of Terminations :
- 3
- FET Type :
- N-Channel
- Series :
- TrenchFET®
- Terminal Position :
- Dual
- Continuous Drain Current (ID) :
- 420mA
- Terminal Finish :
- Matte Tin (Sn)
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Fall Time (Typ) :
- 8 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 350mW Ta
- Threshold Voltage :
- 2V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Turn On Delay Time :
- 4.5 ns
- Vgs (Max) :
- ±20V
- Power Dissipation :
- 350mW
- Gate to Source Voltage (Vgs) :
- 20V
- Lead Free :
- Lead Free
- REACH SVHC :
- Unknown
- Element Configuration :
- Single
- Pin Count :
- 3
- Drain Current-Max (Abs) (ID) :
- 0.42A
- Gate Charge (Qg) (Max) @ Vgs :
- 1.5nC @ 10V
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Turn-Off Delay Time :
- 9 ns
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Current - Continuous Drain (Id) @ 25°C :
- 420mA Ta
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- -55°C~150°C TJ
- Resistance :
- 1.4Ohm
- Datasheets
- TN0201K-T1-E3

N-Channel Tape & Reel (TR) 1 Ω @ 300mA, 10V ±20V 1.5nC @ 10V TO-236-3, SC-59, SOT-23-3
TN0201K-T1-E3 Overview
Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 420mA amps.In this device, the drain-source breakdown voltage is 20V and VGS=20V, so the drain-source breakdown voltage is 20V in this case.A device can conduct a maximum continuous current of [0.42A] according to its drain current.It is [9 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 4.5 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 2V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
TN0201K-T1-E3 Features
a continuous drain current (ID) of 420mA
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 9 ns
a threshold voltage of 2V
TN0201K-T1-E3 Applications
There are a lot of Vishay Siliconix
TN0201K-T1-E3 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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