TN0201K-T1-E3

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Mfr.Part #
TN0201K-T1-E3
Manufacturer
Vishay
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
MOSFET N-CH 20V 420MA SOT23-3
Stock
21,518
In Stock :
21,518

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Form :
Gull wing
Rds On (Max) @ Id, Vgs :
1 Ω @ 300mA, 10V
Rise Time :
8ns
Package / Case :
TO-236-3, SC-59, SOT-23-3
Operating Mode :
ENHANCEMENT MODE
Pbfree Code :
yes
Radiation Hardening :
No
Drain to Source Breakdown Voltage :
20V
Number of Elements :
1
RoHS Status :
ROHS3 Compliant
Published :
2009
Additional Feature :
LOGIC LEVEL COMPATIBLE
Mount :
Surface Mount
Mounting Type :
Surface Mount
Nominal Vgs :
1 V
Number of Terminations :
3
FET Type :
N-Channel
Series :
TrenchFET®
Terminal Position :
Dual
Continuous Drain Current (ID) :
420mA
Terminal Finish :
Matte Tin (Sn)
JESD-609 Code :
e3
Packaging :
Tape and Reel (TR)
Fall Time (Typ) :
8 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Application :
SWITCHING
Power Dissipation-Max :
350mW Ta
Threshold Voltage :
2V
Time@Peak Reflow Temperature-Max (s) :
40
Turn On Delay Time :
4.5 ns
Vgs (Max) :
±20V
Power Dissipation :
350mW
Gate to Source Voltage (Vgs) :
20V
Lead Free :
Lead Free
REACH SVHC :
Unknown
Element Configuration :
Single
Pin Count :
3
Drain Current-Max (Abs) (ID) :
0.42A
Gate Charge (Qg) (Max) @ Vgs :
1.5nC @ 10V
ECCN Code :
EAR99
Number of Pins :
3
Turn-Off Delay Time :
9 ns
Vgs(th) (Max) @ Id :
3V @ 250µA
Transistor Element Material :
SILICON
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Current - Continuous Drain (Id) @ 25°C :
420mA Ta
Peak Reflow Temperature (Cel) :
260
Operating Temperature :
-55°C~150°C TJ
Resistance :
1.4Ohm
Datasheets
TN0201K-T1-E3
Introducing Transistors - FETs, MOSFETs - Single Vishay TN0201K-T1-E3 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-236-3, SC-59, SOT-23-3, Mounting Type:Surface Mount, Number of Terminations:3, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, TN0201K-T1-E3 pinout, TN0201K-T1-E3 datasheet PDF, TN0201K-T1-E3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay TN0201K-T1-E3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay TN0201K-T1-E3


N-Channel Tape & Reel (TR) 1 Ω @ 300mA, 10V ±20V 1.5nC @ 10V TO-236-3, SC-59, SOT-23-3

TN0201K-T1-E3 Overview


Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 420mA amps.In this device, the drain-source breakdown voltage is 20V and VGS=20V, so the drain-source breakdown voltage is 20V in this case.A device can conduct a maximum continuous current of [0.42A] according to its drain current.It is [9 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 4.5 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 2V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

TN0201K-T1-E3 Features


a continuous drain current (ID) of 420mA
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 9 ns
a threshold voltage of 2V


TN0201K-T1-E3 Applications


There are a lot of Vishay Siliconix
TN0201K-T1-E3 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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