TN0201K-T1-E3
- Mfr.Part #
- TN0201K-T1-E3
- Manufacturer
- Vishay
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 420MA SOT23-3
- Stock
- 21,518
- In Stock :
- 21,518
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Packaging :
- Tape and Reel (TR)
- Turn On Delay Time :
- 4.5 ns
- Pin Count :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Fall Time (Typ) :
- 8 ns
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 20V
- Rise Time :
- 8ns
- Mount :
- Surface Mount
- Published :
- 2009
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 1 Ω @ 300mA, 10V
- Continuous Drain Current (ID) :
- 420mA
- Terminal Finish :
- Matte Tin (Sn)
- Resistance :
- 1.4Ohm
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Form :
- Gull wing
- FET Type :
- N-Channel
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Nominal Vgs :
- 1 V
- Current - Continuous Drain (Id) @ 25°C :
- 420mA Ta
- Element Configuration :
- Single
- Power Dissipation-Max :
- 350mW Ta
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Drain to Source Breakdown Voltage :
- 20V
- Series :
- TrenchFET®
- Vgs (Max) :
- ±20V
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Pbfree Code :
- yes
- Gate Charge (Qg) (Max) @ Vgs :
- 1.5nC @ 10V
- Drain Current-Max (Abs) (ID) :
- 0.42A
- Power Dissipation :
- 350mW
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Threshold Voltage :
- 2V
- Operating Mode :
- ENHANCEMENT MODE
- Turn-Off Delay Time :
- 9 ns
- REACH SVHC :
- Unknown
- Datasheets
- TN0201K-T1-E3

N-Channel Tape & Reel (TR) 1 Ω @ 300mA, 10V ±20V 1.5nC @ 10V TO-236-3, SC-59, SOT-23-3
TN0201K-T1-E3 Overview
Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 420mA amps.In this device, the drain-source breakdown voltage is 20V and VGS=20V, so the drain-source breakdown voltage is 20V in this case.A device can conduct a maximum continuous current of [0.42A] according to its drain current.It is [9 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 4.5 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 2V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
TN0201K-T1-E3 Features
a continuous drain current (ID) of 420mA
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 9 ns
a threshold voltage of 2V
TN0201K-T1-E3 Applications
There are a lot of Vishay Siliconix
TN0201K-T1-E3 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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