TN0110N3-G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS :

Details

Mount :

Through Hole

FET Type :

N-Channel

Width :

4.19mm

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Lead Free

Additional Feature :

LOGIC LEVEL COMPATIBLE

Maximum Operating Temperature :

+150 °C

Number of Elements per Chip :

1

Product Category :

MOSFET

Continuous Drain Current :

0.35(A)

RoHS Status :

ROHS3 Compliant

Product Status :

Active

Type :

Power MOSFET

JESD-609 Code :

e3

Operating Temp Range :

-55C to 150C

Rise Time :

3ns

Factory Lead Time :

6 Weeks

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

100V

Gate-Source Voltage (Max) :

±20(V)

Configuration :

Single

Vgs(th) (Max) @ Id :

2V @ 500μA

Transistor Application :

SWITCHING

FET Feature :

--

Rds On (Max) @ Id, Vgs :

3 Ω @ 500mA, 10V

Package Type :

TO-92

Series :

--

Transistor Type :

1 N-Channel

Element Configuration :

Single

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn On Delay Time :

2 ns

Feedback Cap-Max (Crss) :

8 pF

Power Dissipation (Max) :

1W (Tc)

Base Product Number :

TN0110

Turn-Off Delay Time :

6 ns

Terminal Finish :

Matte Tin (Sn)

Supplier Device Package :

TO-92-3

Rad Hardened :

No

Mounting Style :

Through Hole

Published :

2011

Channel Type :

N

Mounting Type :

Through Hole

Pin Count :

3

Fall Time (Typ) :

3 ns

Operating Mode :

ENHANCEMENT MODE

Height :

5.33mm

Minimum Operating Temperature :

-55 °C

Terminal Position :

BOTTOM

Operating Temperature Classification :

Military

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Input Capacitance (Ciss) (Max) @ Vds :

60pF @ 25V

Number of Terminations :

3

Product Type :

MOSFET

Number of Elements :

1

Number of Channels :

1

Continuous Drain Current Id :

350

Package :

Bag

Packaging :

Bulk

Length :

5.21mm

Power Dissipation :

1W

Weight :

453.59237mg

Channel Mode :

Enhancement

Drain to Source Voltage (Vdss) :

100V

Drain-source On Resistance-Max :

3Ohm

Polarity :

N

Current - Continuous Drain (Id) @ 25°C :

350mA Tj

Mounting :

Through Hole

Manufacturer :

Microchip

Continuous Drain Current (ID) :

350mA

Brand :

Microchip Technology / Atmel

Drain-Source On-Volt :

100(V)

Power Dissipation-Max :

1W Tc

Transistor Polarity :

N-Channel

ECCN Code :

EAR99

Radiation Hardening :

No

Transistor Element Material :

SILICON