TN0106N3-G-P013

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Mfr.Part #
TN0106N3-G-P013
Manufacturer
Microchip Technology
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
MOSFET N-CH 60V 350MA TO92-3
Stock
1,907
In Stock :
1,907

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Drain Current-Max (Abs) (ID) :
0.35A
Turn-Off Delay Time :
6 ns
Feedback Cap-Max (Crss) :
8 pF
Product :
MOSFET Small Signal
Rise Time :
3ns
Subcategory :
MOSFETs
Mounting Type :
Through Hole
Transistor Application :
SWITCHING
JESD-30 Code :
O-PBCY-T3
Current - Continuous Drain (Id) @ 25°C :
350mA Tj
Minimum Operating Temperature :
- 55 C
Transistor Element Material :
SILICON
Manufacturer :
Microchip
Gate to Source Voltage (Vgs) :
20V
Package :
Tape and Box (TB)
Mounting Style :
Through Hole
Base Product Number :
TN0106
Input Capacitance (Ciss) (Max) @ Vds :
60pF @ 25V
Element Configuration :
Single
Number of Channels :
1
FET Type :
N-Channel
Transistor Type :
1 N-Channel
Supplier Device Package :
TO-92-3
Vgs(th) (Max) @ Id :
2V @ 500μA
Weight :
453.59237mg
Brand :
Microchip Technology
Terminal Finish :
MATTE TIN
Operating Mode :
ENHANCEMENT MODE
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Packaging :
Tape and Box (TB)
Configuration :
Single
Power Dissipation (Max) :
1W (Tc)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Series :
--
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Published :
2013
Drain to Source Breakdown Voltage :
60V
Continuous Drain Current (ID) :
350mA
Drain-source On Resistance-Max :
3Ohm
Terminal Position :
BOTTOM
Additional Feature :
LOGIC LEVEL COMPATIBLE
Power Dissipation-Max :
1W Tc
FET Feature :
--
Channel Mode :
Enhancement
Drain to Source Voltage (Vdss) :
60V
Vgs (Max) :
±20V
Rds On (Max) @ Id, Vgs :
3 Ω @ 500mA, 10V
Turn On Delay Time :
2 ns
Product Status :
Active
RoHS :
Details
Transistor Polarity :
N-Channel
Fall Time (Typ) :
3 ns
ECCN Code :
EAR99
Number of Elements :
1
Number of Terminations :
3
RoHS Status :
ROHS3 Compliant
Product Type :
MOSFET
Qualification Status :
Not Qualified
Maximum Operating Temperature :
+ 150 C
Mount :
Through Hole
JESD-609 Code :
e3
Product Category :
MOSFET
Operating Temperature :
-55°C~150°C TJ
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Factory Lead Time :
6 Weeks
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Datasheets
TN0106N3-G-P013
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TN0106N3-G-P013 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Channels:1, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-226-3, TO-92-3 (TO-226AA), TN0106N3-G-P013 pinout, TN0106N3-G-P013 datasheet PDF, TN0106N3-G-P013 amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TN0106N3-G-P013 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TN0106N3-G-P013


N-Channel Tape & Box (TB) 3 Ω @ 500mA, 10V ±20V 60pF @ 25V 60V TO-226-3, TO-92-3 (TO-226AA)

TN0106N3-G-P013 Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 60pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 350mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 60V, and this device has a drainage-to-source breakdown voltage of 60VV.Drain current refers to the maximum continuous current a device can conduct, and it is 0.35A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 6 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 2 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 60V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.

TN0106N3-G-P013 Features


a continuous drain current (ID) of 350mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 6 ns
a 60V drain to source voltage (Vdss)


TN0106N3-G-P013 Applications


There are a lot of Microchip Technology
TN0106N3-G-P013 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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