TN0106N3-G-P013
- Mfr.Part #
- TN0106N3-G-P013
- Manufacturer
- Microchip Technology
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 350MA TO92-3
- Stock
- 1,907
- In Stock :
- 1,907
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain Current-Max (Abs) (ID) :
- 0.35A
- Turn-Off Delay Time :
- 6 ns
- Feedback Cap-Max (Crss) :
- 8 pF
- Product :
- MOSFET Small Signal
- Rise Time :
- 3ns
- Subcategory :
- MOSFETs
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- JESD-30 Code :
- O-PBCY-T3
- Current - Continuous Drain (Id) @ 25°C :
- 350mA Tj
- Minimum Operating Temperature :
- - 55 C
- Transistor Element Material :
- SILICON
- Manufacturer :
- Microchip
- Gate to Source Voltage (Vgs) :
- 20V
- Package :
- Tape and Box (TB)
- Mounting Style :
- Through Hole
- Base Product Number :
- TN0106
- Input Capacitance (Ciss) (Max) @ Vds :
- 60pF @ 25V
- Element Configuration :
- Single
- Number of Channels :
- 1
- FET Type :
- N-Channel
- Transistor Type :
- 1 N-Channel
- Supplier Device Package :
- TO-92-3
- Vgs(th) (Max) @ Id :
- 2V @ 500μA
- Weight :
- 453.59237mg
- Brand :
- Microchip Technology
- Terminal Finish :
- MATTE TIN
- Operating Mode :
- ENHANCEMENT MODE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Tape and Box (TB)
- Configuration :
- Single
- Power Dissipation (Max) :
- 1W (Tc)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- --
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Published :
- 2013
- Drain to Source Breakdown Voltage :
- 60V
- Continuous Drain Current (ID) :
- 350mA
- Drain-source On Resistance-Max :
- 3Ohm
- Terminal Position :
- BOTTOM
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Power Dissipation-Max :
- 1W Tc
- FET Feature :
- --
- Channel Mode :
- Enhancement
- Drain to Source Voltage (Vdss) :
- 60V
- Vgs (Max) :
- ±20V
- Rds On (Max) @ Id, Vgs :
- 3 Ω @ 500mA, 10V
- Turn On Delay Time :
- 2 ns
- Product Status :
- Active
- RoHS :
- Details
- Transistor Polarity :
- N-Channel
- Fall Time (Typ) :
- 3 ns
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Product Type :
- MOSFET
- Qualification Status :
- Not Qualified
- Maximum Operating Temperature :
- + 150 C
- Mount :
- Through Hole
- JESD-609 Code :
- e3
- Product Category :
- MOSFET
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Factory Lead Time :
- 6 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Datasheets
- TN0106N3-G-P013
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N-Channel Tape & Box (TB) 3 Ω @ 500mA, 10V ±20V 60pF @ 25V 60V TO-226-3, TO-92-3 (TO-226AA)
TN0106N3-G-P013 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 60pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 350mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 60V, and this device has a drainage-to-source breakdown voltage of 60VV.Drain current refers to the maximum continuous current a device can conduct, and it is 0.35A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 6 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 2 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 60V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
TN0106N3-G-P013 Features
a continuous drain current (ID) of 350mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 6 ns
a 60V drain to source voltage (Vdss)
TN0106N3-G-P013 Applications
There are a lot of Microchip Technology
TN0106N3-G-P013 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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