TK9J90E,S1E
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- Mfr.Part #
- TK9J90E,S1E
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 9A TO3P
- Stock
- 3
- In Stock ：
- 3
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Breakdown Voltage :
- 900V
- Gate to Source Voltage (Vgs) :
- 30V
- FET Type :
- N-Channel
- Rds On Max :
- 1.3 Ω
- Turn On Delay Time :
- 80 ns
- Vgs (Max) :
- ±30V
- Packaging :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 46nC @ 10V
- Turn-Off Delay Time :
- 140 ns
- Rds On (Max) @ Id, Vgs :
- 1.3Ohm @ 4.5A, 10V
- Max Operating Temperature :
- 150°C
- Number of Channels :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Voltage (Vdss) :
- 900V
- Min Operating Temperature :
- -55°C
- Vgs(th) (Max) @ Id :
- 4V @ 900μA
- RoHS Status :
- RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 16 Weeks
- Input Capacitance :
- 2nF
- Fall Time (Typ) :
- 35 ns
- Operating Temperature :
- 150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 9A Ta
- Drain to Source Resistance :
- 1Ohm
- Weight :
- 6.961991g
- Continuous Drain Current (ID) :
- 9A
- Rise Time :
- 40ns
- Published :
- 2014
- Mount :
- Through Hole
- Package / Case :
- TO-3P-3, SC-65-3
- Supplier Device Package :
- TO-3P(N)
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 2000pF @ 25V
- Power Dissipation-Max :
- 250W Tc
- Datasheets
- TK9J90E,S1E
N-Channel Tube 1.3Ohm @ 4.5A, 10V ±30V 2000pF @ 25V 46nC @ 10V 900V TO-3P-3, SC-65-3
TK9J90E,S1E Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2000pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 9A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 900V, and this device has a drainage-to-source breakdown voltage of 900VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 140 ns.This device has a drain-to-source resistance of 1Ohm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 80 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.For this transistor to work, a voltage 900V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
TK9J90E,S1E Features
a continuous drain current (ID) of 9A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 140 ns
single MOSFETs transistor is 1Ohm
a 900V drain to source voltage (Vdss)
TK9J90E,S1E Applications
There are a lot of Toshiba Semiconductor and Storage
TK9J90E,S1E applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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