TK8S06K3L(T6L1,NQ)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

8A

Rise Time :

7ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Rds On (Max) @ Id, Vgs :

54m Ω @ 4A, 10V

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

8A Ta

Power Dissipation-Max :

25W Tc

Vgs (Max) :

±20V

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

3V @ 1mA

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

60V

FET Type :

N-Channel

Series :

U-MOSIV

RoHS Status :

RoHS Compliant

Factory Lead Time :

12 Weeks

Published :

2012

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 10V

Number of Pins :

3

Mounting Type :

Surface Mount

Fall Time (Typ) :

4 ns

Operating Temperature :

175°C TJ