TK8R2E06PL,S1X

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

50A (Tc)

FET Type :

N-Channel

Tradename :

U-MOSIX-H

Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

28 nC @ 10 V

Package :

Tube

Package / Case :

TO-220-3

Manufacturer :

Toshiba

Product Type :

MOSFET

Subcategory :

MOSFETs

Power Dissipation (Max) :

81W (Tc)

Channel Mode :

Enhancement

Product Category :

MOSFET

Mounting Type :

Through Hole

Number of Channels :

1 Channel

Input Capacitance (Ciss) (Max) @ Vds :

1990 pF @ 30 V

Operating Temperature :

175°C

Drain to Source Voltage (Vdss) :

60 V

Rds On (Max) @ Id, Vgs :

8.2mOhm @ 25A, 10V

Mounting Style :

Through Hole

Series :

U-MOSIX-H

Vgs (Max) :

±20V

Transistor Polarity :

N-Channel

Minimum Operating Temperature :

- 55 C

RoHS :

Details

Packaging :

Tube

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Transistor Type :

1 N-Channel

Brand :

Toshiba

Rise Time :

5 ns

Vgs(th) (Max) @ Id :

2.5V @ 300μA

Product Status :

Active

FET Feature :

-

Maximum Operating Temperature :

+ 175 C

Supplier Device Package :

TO-220