TK8Q60W,S1VQ

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

DTMOSIV

Input Capacitance (Ciss) (Max) @ Vds :

570pF @ 300V

Continuous Drain Current (ID) :

8A

Package / Case :

TO-251-3 Stub Leads, IPak

Mounting Type :

Through Hole

Rds On Max :

500 mΩ

Rds On (Max) @ Id, Vgs :

500mOhm @ 4A, 10V

Turn-Off Delay Time :

70 ns

FET Feature :

Super Junction

Packaging :

Tube

Published :

2014

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Supplier Device Package :

I-PAK

Input Capacitance :

570pF

Element Configuration :

Single

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

8A Ta

Drain to Source Resistance :

420mOhm

Vgs(th) (Max) @ Id :

3.7V @ 400μA

Resistance :

500MOhm

FET Type :

N-Channel

Max Operating Temperature :

150°C

Vgs (Max) :

±30V

Rise Time :

20ns

RoHS Status :

RoHS Compliant

Factory Lead Time :

16 Weeks

Capacitance :

570pF

Operating Temperature :

150°C TJ

Drain to Source Voltage (Vdss) :

600V

Gate to Source Voltage (Vgs) :

30V

Min Operating Temperature :

-55°C

Number of Pins :

3

Fall Time (Typ) :

5.5 ns

Gate Charge (Qg) (Max) @ Vgs :

18.5nC @ 10V

Power Dissipation-Max :

80W Tc