TK8P60W,RVQ

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

3.7V @ 400μA

Rise Time :

20ns

Max Operating Temperature :

150°C

FET Feature :

Super Junction

Rds On (Max) @ Id, Vgs :

500mOhm @ 4A, 10V

Published :

2014

Power Dissipation-Max :

80W Tc

Rds On Max :

500 mΩ

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

18.5nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

570pF @ 300V

Element Configuration :

Single

Drain to Source Breakdown Voltage :

600V

Mount :

Surface Mount

Turn-Off Delay Time :

70 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

16 Weeks

Gate to Source Voltage (Vgs) :

30V

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

8A

RoHS Status :

RoHS Compliant

Supplier Device Package :

DPAK

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

600V

FET Type :

N-Channel

Series :

DTMOSIV

Current - Continuous Drain (Id) @ 25°C :

8A Ta

Operating Temperature :

150°C TJ

Min Operating Temperature :

-55°C

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Input Capacitance :

570pF

Drain to Source Resistance :

420mOhm

Fall Time (Typ) :

5.5 ns

Vgs (Max) :

±30V