TK7Q60W,S1VQ

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

55 ns

Number of Pins :

3

Vgs(th) (Max) @ Id :

3.7V @ 350μA

Operating Temperature :

150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

490pF @ 300V

Rds On (Max) @ Id, Vgs :

600mOhm @ 3.5A, 10V

Factory Lead Time :

16 Weeks

Package / Case :

TO-251-3 Stub Leads, IPak

Vgs (Max) :

±30V

Fall Time (Typ) :

7 ns

Gate to Source Voltage (Vgs) :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

60W Tc

Rise Time :

18ns

Supplier Device Package :

I-PAK

Drain to Source Resistance :

500MOhm

Element Configuration :

Single

RoHS Status :

RoHS Compliant

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

7A Ta

Series :

DTMOSIV

Mounting Type :

Through Hole

Input Capacitance :

490pF

Continuous Drain Current (ID) :

7A

FET Type :

N-Channel

Packaging :

Tube

Published :

2014

Drain to Source Voltage (Vdss) :

600V

Turn On Delay Time :

40 ns

Weight :

3.949996g

Number of Channels :

1

Min Operating Temperature :

-55°C

Rds On Max :

600 mΩ

Max Operating Temperature :

150°C

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V