TK7J90E,S1E
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- Mfr.Part #
- TK7J90E,S1E
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 7A TO3P
- Stock
- 10
- In Stock ：
- 10
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance :
- 1.35nF
- Gate Charge (Qg) (Max) @ Vgs :
- 32nC @ 10V
- Element Configuration :
- Single
- Packaging :
- Tube
- Operating Temperature :
- 150°C TJ
- Turn On Delay Time :
- 55 ns
- Drain to Source Resistance :
- 1.6Ohm
- Gate to Source Voltage (Vgs) :
- 30V
- Drain to Source Voltage (Vdss) :
- 900V
- Min Operating Temperature :
- -55°C
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Max Operating Temperature :
- 150°C
- Series :
- π-MOSVIII
- Package / Case :
- TO-3P-3, SC-65-3
- Turn-Off Delay Time :
- 85 ns
- FET Type :
- N-Channel
- Weight :
- 6.961991g
- Current - Continuous Drain (Id) @ 25°C :
- 7A Ta
- Rds On Max :
- 2 Ω
- Rise Time :
- 20ns
- Fall Time (Typ) :
- 15 ns
- Supplier Device Package :
- TO-3P(N)
- Continuous Drain Current (ID) :
- 7A
- Vgs (Max) :
- ±30V
- Vgs(th) (Max) @ Id :
- 4V @ 700μA
- Factory Lead Time :
- 16 Weeks
- Number of Channels :
- 1
- Mounting Type :
- Through Hole
- Drain to Source Breakdown Voltage :
- 900V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- RoHS Status :
- RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 1350pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 2Ohm @ 3.5A, 10V
- Published :
- 2014
- Power Dissipation-Max :
- 200W Tc
- Datasheets
- TK7J90E,S1E
N-Channel Tube 2Ohm @ 3.5A, 10V ±30V 1350pF @ 25V 32nC @ 10V 900V TO-3P-3, SC-65-3
TK7J90E,S1E Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1350pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 7A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 900V, and this device has a drainage-to-source breakdown voltage of 900VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 85 ns.This device has a drain-to-source resistance of 1.6Ohm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 55 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.For this transistor to work, a voltage 900V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
TK7J90E,S1E Features
a continuous drain current (ID) of 7A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 85 ns
single MOSFETs transistor is 1.6Ohm
a 900V drain to source voltage (Vdss)
TK7J90E,S1E Applications
There are a lot of Toshiba Semiconductor and Storage
TK7J90E,S1E applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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