TK7J90E,S1E

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Operating Temperature :

150°C TJ

Turn-Off Delay Time :

85 ns

Series :

π-MOSVIII

Input Capacitance (Ciss) (Max) @ Vds :

1350pF @ 25V

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

7A Ta

Continuous Drain Current (ID) :

7A

Packaging :

Tube

Rds On Max :

2 Ω

Power Dissipation-Max :

200W Tc

Mounting Type :

Through Hole

Vgs (Max) :

±30V

Published :

2014

Drain to Source Breakdown Voltage :

900V

Drain to Source Resistance :

1.6Ohm

Mount :

Through Hole

Fall Time (Typ) :

15 ns

Supplier Device Package :

TO-3P(N)

Gate to Source Voltage (Vgs) :

30V

Drain to Source Voltage (Vdss) :

900V

Vgs(th) (Max) @ Id :

4V @ 700μA

RoHS Status :

RoHS Compliant

Turn On Delay Time :

55 ns

Input Capacitance :

1.35nF

Weight :

6.961991g

Rds On (Max) @ Id, Vgs :

2Ohm @ 3.5A, 10V

Rise Time :

20ns

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Package / Case :

TO-3P-3, SC-65-3

Factory Lead Time :

16 Weeks

Min Operating Temperature :

-55°C

Drive Voltage (Max Rds On,Min Rds On) :

10V

Max Operating Temperature :

150°C

Number of Channels :

1