TK7E80W,S1X
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- Mfr.Part #
- TK7E80W,S1X
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 6.5A TO220
- Stock
- 35,714
- In Stock ：
- 35,714
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tube
- Operating Temperature :
- 150°C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 700pF @ 300V
- FET Type :
- N-Channel
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 16 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 6.5A Ta
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 4V @ 280μA
- Supplier Device Package :
- TO-220
- Drain to Source Voltage (Vdss) :
- 800V
- Rds On (Max) @ Id, Vgs :
- 950mOhm @ 3.3A, 10V
- Series :
- DTMOSIV
- RoHS Status :
- RoHS Compliant
- Package / Case :
- TO-220-3
- Power Dissipation-Max :
- 110W Tc
- Datasheets
- TK7E80W,S1X
N-Channel Tube 950mOhm @ 3.3A, 10V ±20V 700pF @ 300V 13nC @ 10V 800V TO-220-3
TK7E80W,S1X Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 700pF @ 300V.Operating this transistor requires a 800V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
TK7E80W,S1X Features
a 800V drain to source voltage (Vdss)
TK7E80W,S1X Applications
There are a lot of Toshiba Semiconductor and Storage
TK7E80W,S1X applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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