TK70D06J1(Q)
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- Mfr.Part #
- TK70D06J1(Q)
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 70A TO220
- Stock
- 18,491
- In Stock ：
- 18,491
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 87nC @ 10V
- Input Capacitance :
- 5.45nF
- Rds On (Max) @ Id, Vgs :
- 6.4mOhm @ 35A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 70A Ta
- RoHS Status :
- RoHS Compliant
- Drain to Source Voltage (Vdss) :
- 60V
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Resistance :
- 5.1mOhm
- Power Dissipation :
- 140W
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Mounting Type :
- Through Hole
- Supplier Device Package :
- TO-220(W)
- Max Operating Temperature :
- 150°C
- Continuous Drain Current (ID) :
- 70A
- Lead Free :
- Lead Free
- Published :
- 2008
- Packaging :
- Tube
- Power Dissipation-Max :
- 45W Tc
- Rds On Max :
- 6.4 mΩ
- Min Operating Temperature :
- -55°C
- FET Type :
- N-Channel
- Operating Temperature :
- 150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 5450pF @ 10V
- Mount :
- Through Hole
- Vgs(th) (Max) @ Id :
- 2.3V @ 1mA
- Drain to Source Breakdown Voltage :
- 60V
- Package / Case :
- TO-220-3
- Datasheets
- TK70D06J1(Q)
N-Channel Tube 6.4mOhm @ 35A, 10V ±20V 5450pF @ 10V 87nC @ 10V 60V TO-220-3
TK70D06J1(Q) Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 5450pF @ 10V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 70A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 60V, and this device has a drainage-to-source breakdown voltage of 60VV.This device has a drain-to-source resistance of 5.1mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 60V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
TK70D06J1(Q) Features
a continuous drain current (ID) of 70A
a drain-to-source breakdown voltage of 60V voltage
single MOSFETs transistor is 5.1mOhm
a 60V drain to source voltage (Vdss)
TK70D06J1(Q) Applications
There are a lot of Toshiba Semiconductor and Storage
TK70D06J1(Q) applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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