TK6Q65W,S1Q

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Supplier Device Package :

I-PAK

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

5.8A Ta

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

1.05Ohm @ 2.9A, 10V

Continuous Drain Current (ID) :

5.8A

Vgs (Max) :

±30V

RoHS Status :

RoHS Compliant

Operating Temperature :

150°C TJ

Drain to Source Voltage (Vdss) :

650V

Mount :

Through Hole

FET Type :

N-Channel

Series :

DTMOSIV

Vgs(th) (Max) @ Id :

3.5V @ 180μA

Package / Case :

TO-251-3 Stub Leads, IPak

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Factory Lead Time :

16 Weeks

Rds On Max :

1.05 Ω

Power Dissipation-Max :

60W Tc

Input Capacitance (Ciss) (Max) @ Vds :

390pF @ 300V

Input Capacitance :

390pF

Published :

2015