TK5R1A08QM,S4X

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

FET Feature :

-

Maximum Operating Temperature :

+ 175 C

Number of Channels :

1 Channel

Input Capacitance (Ciss) (Max) @ Vds :

3980 pF @ 40 V

Supplier Device Package :

TO-220SIS

Package :

Tube

Mounting Type :

Through Hole

Drain to Source Voltage (Vdss) :

80 V

Drive Voltage (Max Rds On, Min Rds On) :

6V, 10V

FET Type :

N-Channel

Series :

U-MOSX-H

Vgs(th) (Max) @ Id :

3.5V @ 700μA

Minimum Operating Temperature :

-

Power Dissipation (Max) :

45W (Tc)

Rds On (Max) @ Id, Vgs :

5.1mOhm @ 35A, 10V

Channel Mode :

Enhancement

Operating Temperature :

175°C

Gate Charge (Qg) (Max) @ Vgs :

54 nC @ 10 V

Product Status :

Active

Vgs (Max) :

±20V

Transistor Polarity :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

70A (Tc)

Mounting Style :

Through Hole

Package / Case :

TO-220-3 Full Pack