TK55D10J1(Q)
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- Mfr.Part #
- TK55D10J1(Q)
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 55A TO220
- Stock
- 27,526
- In Stock ：
- 27,526
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Element Configuration :
- Single
- Power Dissipation-Max :
- 140W Tc
- Max Operating Temperature :
- 150°C
- Input Capacitance :
- 5.7nF
- Rds On Max :
- 10.5 mΩ
- Drain to Source Resistance :
- 10.5mOhm
- Drain to Source Breakdown Voltage :
- 100V
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Rise Time :
- 7ns
- Rds On (Max) @ Id, Vgs :
- 10.5mOhm @ 27A, 10V
- Packaging :
- Tube
- Min Operating Temperature :
- -55°C
- Input Capacitance (Ciss) (Max) @ Vds :
- 5700pF @ 10V
- Mounting Type :
- Through Hole
- Power Dissipation :
- 140W
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- Mount :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 55A Ta
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- RoHS Compliant
- Drain to Source Voltage (Vdss) :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2009
- Continuous Drain Current (ID) :
- 55A
- Lead Free :
- Lead Free
- Fall Time (Typ) :
- 20 ns
- Supplier Device Package :
- TO-220(W)
- Vgs(th) (Max) @ Id :
- 2.3V @ 1mA
- Vgs (Max) :
- ±20V
- Package / Case :
- TO-220-3
- Datasheets
- TK55D10J1(Q)
N-Channel Tube 10.5mOhm @ 27A, 10V ±20V 5700pF @ 10V 110nC @ 10V 100V TO-220-3
TK55D10J1(Q) Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 5700pF @ 10V.This device has a continuous drain current (ID) of [55A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=100V, the drain-source breakdown voltage is 100V.MOSFETs have 10.5mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
TK55D10J1(Q) Features
a continuous drain current (ID) of 55A
a drain-to-source breakdown voltage of 100V voltage
single MOSFETs transistor is 10.5mOhm
a 100V drain to source voltage (Vdss)
TK55D10J1(Q) Applications
There are a lot of Toshiba Semiconductor and Storage
TK55D10J1(Q) applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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