TK46A08N1,S4X
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- Mfr.Part #
- TK46A08N1,S4X
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 46A TO220SIS
- Stock
- 16,656
- In Stock ：
- 16,656
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Through Hole
- Turn On Delay Time :
- 30 ns
- Gate to Source Voltage (Vgs) :
- 20V
- ECCN Code :
- EAR99
- Drain Current-Max (Abs) (ID) :
- 80A
- Current - Continuous Drain (Id) @ 25°C :
- 46A Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Turn-Off Delay Time :
- 51 ns
- Number of Pins :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 4V @ 500μA
- Rise Time :
- 11ns
- Series :
- U-MOSVIII-H
- Continuous Drain Current (ID) :
- 46A
- FET Type :
- N-Channel
- Vgs (Max) :
- ±20V
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- 150°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 37nC @ 10V
- Package / Case :
- TO-220-3 Full Pack
- Drain to Source Breakdown Voltage :
- 80V
- Published :
- 2014
- Rds On (Max) @ Id, Vgs :
- 8.4m Ω @ 23A, 10V
- Weight :
- 6.000006g
- Input Capacitance (Ciss) (Max) @ Vds :
- 2500pF @ 40V
- Element Configuration :
- Single
- RoHS Status :
- RoHS Compliant
- Mount :
- Through Hole
- Power Dissipation-Max :
- 35W Tc
- Number of Channels :
- 1
- Factory Lead Time :
- 12 Weeks
- Radiation Hardening :
- No
- Fall Time (Typ) :
- 17 ns
- Datasheets
- TK46A08N1,S4X
N-Channel Tube 8.4m Ω @ 23A, 10V ±20V 2500pF @ 40V 37nC @ 10V TO-220-3 Full Pack
TK46A08N1,S4X Overview
A device's maximal input capacitance is 2500pF @ 40V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 46A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 80V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 80A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 51 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 30 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (10V).
TK46A08N1,S4X Features
a continuous drain current (ID) of 46A
a drain-to-source breakdown voltage of 80V voltage
the turn-off delay time is 51 ns
TK46A08N1,S4X Applications
There are a lot of Toshiba Semiconductor and Storage
TK46A08N1,S4X applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| TK46E08N1,S1X | Toshiba Electronic Devices and Storage Corporation | 33 | MOSFET N-CH 80V 80A TO220 |
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