TK45P03M1,RQ(S

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Max Operating Temperature :

150°C

Supplier Device Package :

DPAK

RoHS Status :

RoHS Compliant

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

9.7mOhm @ 22.5A, 10V

Rise Time :

4.2ns

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Drain to Source Voltage (Vdss) :

30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs(th) (Max) @ Id :

2.3V @ 200μA

Current - Continuous Drain (Id) @ 25°C :

45A Ta

Rds On Max :

9.7 mΩ

Fall Time (Typ) :

9.4 ns

Factory Lead Time :

12 Weeks

Series :

U-MOSVI-H

Input Capacitance (Ciss) (Max) @ Vds :

1500pF @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Published :

2009

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Max Power Dissipation :

39W

Continuous Drain Current (ID) :

45A

Input Capacitance :

1.5nF

Min Operating Temperature :

-55°C

Radiation Hardening :

No

Number of Pins :

3

Mount :

Surface Mount